Showerhead for CVD Depositions
AssigneeTexas Instruments Incorporated
InventorsBrian E. Goodlin, Qidu Jiang
Life of this patent
Estimating the term…
Abstract
A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled to oxygen plus a gas mixture of lead, zirconium, and titanium organometallics. A method of depositing a CVD thin film on a wafer. Also, a method of depositing a PZT thin film on a wafer.
Claims20
A showerhead for a CVD process, comprising:
- a circular inner showerhead that is used for said CVD process;
- at least one outer ring showerhead coupled to said circular inner showerhead, said outer ring showerhead being concentric with said circular inner showerhead;
- at least a first and a second process gas delivery tube coupled to said circular inner showerhead;
- and
- at least a third and a forth process gas delivery tube coupled to said outer ring showerhead.
A showerhead for a CVD process, comprising:
- a circular inner showerhead that is used for said CVD process;
- an outer ring showerhead coupled to said circular inner showerhead, said outer ring showerhead being concentric with said circular inner showerhead;
- a first process gas delivery tube coupled to said circular inner showerhead and also coupled to a first gas delivery system containing a lead organometallic, a zirconium organometallic, and a titanium organometallic;
- a second process gas delivery tube coupled to said circular inner showerhead and also coupled to a second gas delivery system containing oxygen;
- a third process gas delivery tube coupled to said outer ring showerhead and also coupled to a third gas delivery system containing a lead organometallic, a zirconium organometallic, and a titanium organometallic;
- and
- a fourth process gas delivery tube coupled to said outer ring showerhead and also coupled to a fourth gas delivery system containing oxygen.
A process of depositing a CVD thin film, comprising:
- supplying a non-reacting process gas mixture to a mixing chamber of a showerhead through a first process gas delivery tube;
- and
- supplying a reactant gas to said mixing chamber through a second process gas delivery tube.
A process of depositing a CVD thin film, comprising:
- supplying a non-reacting process gas mixture to a first chamber of a showerhead;
- and
- supplying a reactant gas to a second chamber of said showerhead.
A process of depositing a CVD thin film, comprising:
- supplying a first process gas mixture to a circular inner showerhead through a first process gas delivery tube, where the individual gases in said first process gas mixture do not react with each other;
- supplying a second process gas mixture to said circular inner showerhead through a second process gas delivery tube;
- supplying a third process gas mixture to an outer ring showerhead through a third process gas delivery tube where said third process gas mixture is composed of the same process gasses as said first process gas mixture but where at least one process gas in said third process gas mixture has a different concentration than in said first process gas mixture;
- supplying a fourth process gas mixture to said outer ring showerhead through a fourth process gas delivery tube;
- and
- providing a wafer center-to-edge temperature gradient that is about 10° C. or less.
A process of depositing a CVD thin film in a CVD chamber, comprising:
- supplying a first process gas mixture containing a lead organometallic, a zirconium organometallic, a titanium organometallic and a carrier gas to a circular inner showerhead through a first process gas delivery tube;
- supplying oxygen to said circular inner showerhead through a second process gas delivery tube;
- supplying a third process gas mixture containing a lead organometallic, a zirconium organometallic, a titanium organometallic and a carrier gas to an outer ring showerhead through a third process gas delivery tube;
- supplying said oxygen to said outer ring showerhead through a fourth process gas delivery tube;
- and
- creating a temperature gradient of less than 10 degrees from center to an edge of a wafer in said CVD chamber.
Dependencies are inferred from the claim text.