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US 2011/0256715 A1Published application
Barrier layer for copper interconnect
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShing-Chyang PAN, Han-Hsin KUO, Chung-Chi KO, Ching-Hua HSIEH
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Abstract
A copper interconnect includes a copper layer formed in a dielectric layer. A liner is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary between the liner and the dielectric layer. The barrier layer is a metal oxide.
Claims21
A method, comprising:
- providing a substrate;
- forming a dielectric layer overlying the substrate;
- forming an opening in the dielectric layer;
- forming a seed layer overlying the opening;
- filling a conductive layer in the opening;
- and
- providing a thermal process to form a metal oxide barrier layer underlying the conductive layer wherein the metal oxide barrier layer contains carbon or nitrogen.
4 more elements
A method, comprising:
- providing a semiconductor substrate;
- forming a dielectric layer overlying the semiconductor substrate;
- forming an opening in the dielectric layer;
- forming a liner overlying the opening in the dielectric layer;
- forming a seed layer overlying the liner;
- filling a conductive layer in the opening;
- and
- providing a thermal process to form a metal oxide barrier layer underlying the conductive layer wherein the metal oxide barrier layer contains carbon or nitrogen.
5 more elements
A method, comprising:
- providing a semiconductor substrate;
- forming a dielectric layer overlying the semiconductor substrate;
- forming an opening in the dielectric layer;
- providing a treatment on the opening to incorporate carbon and nitrogen in sidewall regions of the opening;
- forming a copper alloy seed layer overlying the treated dielectric layer;
- filling a conductive layer in the opening;
- and
- providing a thermal process to form a metal oxide barrier layer underlying the conductive layer.
5 more elements
Dependencies are inferred from the claim text.