Semiconductor device and method of fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorMasahiro Inohara
Life of this patent
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Abstract
A semiconductor device according to one embodiment includes: a substrate having an element region where a semiconductor element is formed; a via hole formed in a portion of the substrate adjacent to the element region; a conducting portion provided in the via hole via an insulating layer; and a buffer layer provided between the substrate and the insulating layer, wherein the buffer layer is made of a material in which a difference in thermal expansion coefficient between the substrate and the buffer layer is smaller than that between the substrate and the insulating layer.
Claims10
A method of fabricating a semiconductor device, comprising:
- forming a via hole in a portion of a substrate adjacent to an element region, the substrate having the element region where a semiconductor element is formed;
- forming a buffer layer on a sidewall of the via hole;
- forming an insulating layer on the buffer layer opposite to the sidewall;
- and
- filling a hole of the insulating layer opposite to the buffer layer side with a conductive material,
- wherein the buffer layer is formed of a material in that a difference in thermal expansion coefficient between the substrate and the buffer layer is smaller than that between the substrate and the insulating layer.
A method of fabricating a semiconductor device, comprising:
- forming a processing hole in a portion of a substrate adjacent to an element region, the substrate having the element region where a semiconductor element is formed;
- forming a buffer layer on a sidewall of the processing hole;
- forming an insulating layer on the buffer layer opposite to the sidewall;
- and
- filling a hole of the insulating layer opposite to the buffer layer side with a conductive material,
- wherein the buffer layer is formed of a material in that a difference in thermal expansion coefficient between the substrate and the buffer layer is smaller than that between the substrate and the insulating layer.
Dependencies are inferred from the claim text.