Thin film transistor and display device, and method for manufacturing thereof

A method for forming a pattern comprising the steps of:

• forming a first region over a substrate;
• emitting light selectively to the first region to form a second region;
• discharging a composition containing a pattern formation material to a region across the second region and the first region;
• and
• flowing a part of the composition discharged to the first region into the second region;
• wherein wettability of the first region with respect to the composition is lower than wettability of the second region with respect to the composition.

A method for manufacturing a thin film transistor comprising the steps of:

• forming a first region and a second region;
• discharging a composition containing a conductive material to a region across the second region and the first region;
• and
• flowing a part of the composition discharged to the first region into the second region to form an electrode layer;
• wherein wettability of the first region with respect to the composition is lower than wettability of the second region with respect to the composition.

A method for manufacturing a thin film transistor comprising the steps of:

• forming a first region and a second region;
• discharging a composition containing a first conductive material to a region across the first region and the second region;
• flowing a part of the composition discharged to the first region into the second region to form an electrode layer;
• and
• discharging a second conductive material to the second region to be in contact with the electrode layer to form a wiring layer;
• wherein wettability of the first region with respect to the composition is lower than wettability of the second region with respect to the composition.

A method for forming a thin film transistor comprising the steps of:

• forming selectively a photocatalytic substance over a substrate;
• forming a first region over the substrate and the photocatalytic substance;
• emitting light to the photocatalytic substance to form a second region;
• discharging a composition containing a conductive material to a region across the first region and the second region;
• and
• flowing a part of the composition discharged to the first region into the second region to form an electrode layer;
• wherein wettability of the first region with respect to the composition is lower than wettability of the second region with respect to the composition.

A method for manufacturing a thin film transistor comprising the steps of:

• forming a first region and a second region over a substrate;
• discharging a first composition containing a mask formation material to a region across the first region and the second region;
• flowing a part of the first composition containing the mask formation material discharged to the first region into the second region to form a mask;
• changing a part of the first region by using the mask to form a third region;
• forming a fourth region by removing the mask;
• discharging a second composition containing a conductive material to a region across the third region and the fourth region;
• and
• flowing the second composition in the fourth region into the third region to form a first electrode layer and a second electrode layer;
• wherein wettability of the first region with respect to the first composition containing the mask formation material is lower than wettability of the second region with respect to the first composition containing the mask formation material, and wettability of the fourth region with respect to the conductive material is lower than wettability of the third region with respect to the conductive material.