Method of fabricating semiconductor device

A method of fabricating a semiconductor device comprising:

• providing a substrate including first and second regions;
• forming first and second sacrificial gates in the first and second regions, respectively;
• forming an interlayer insulating film to cover the first and second sacrificial gates;
• planarizing the interlayer insulating film to expose upper surfaces of the first and second sacrificial gates;
• forming first and second trenches in the first and second regions, respectively, by removing the first and second sacrificial gates;
• forming a titanium nitride (TiN) film on an upper surface of the interlayer insulating film, side and bottom surfaces of the first trench, and side and bottom surfaces of the second trench;
• forming a developable bottom anti-reflective coating (DBARC) film on the TiN film to fill in the first and second trenches;
• forming a photoresist film on the DBARC film;
• forming a photoresist pattern and a DBARC pattern and developing the photoresist film and the DBARC film to expose the TiN film formed in the first region;
• removing the TiN film formed in the first region by using the photoresist pattern and the DBARC pattern;
• removing the photoresist pattern and the DBARC pattern;
• and
• forming a first metal gate in the first trench and a second metal gate in the second trench.

A method of forming metal gates in a semiconductor device including a substrate including at least first and second regions, the method comprising:

• forming an interlayer insulating film including first and second trenches on the substrate, the first and second trenches being formed in the first and second regions, respectively;
• forming a metal film on each of the first trench and the second trench;
• forming a mask film on the interlayer insulating film to fill in the first and second trenches, the mask film including a developable material;
• forming a mask pattern by developing the mask film, the mask pattern exposing the metal film formed in the first region;
• removing the metal film formed in the first region by using the mask pattern;
• removing the mask pattern;
• and
• forming a first metal gate in the first trench and a second metal gate in the second trench.