Method for manufacturing silicon carbide semiconductor device
AssigneeShowa Denko K.K.
InventorTakashi Masuda
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Abstract
Provided is a method for manufacturing a silicon carbide semiconductor device which is capable of obtaining the silicon carbide semiconductor device having a high forward current and a low reverse leakage current by a simple method. The method for manufacturing a silicon carbide semiconductor device includes the steps of: forming a film made of a first electrode material on one surface of a silicon carbide substrate, and forming an ohmic electrode by performing heat treatment at a temperature range of 930 to 950° C.; and forming a film made of a second electrode material on the other surface of the silicon carbide substrate, and forming a Schottky electrode by performing heat treatment.
Claims5
A method for manufacturing a silicon carbide semiconductor device, comprising the steps of:
- forming a film made of a first electrode material on one surface of a silicon carbide substrate, and forming an ohmic electrode by performing heat treatment at a temperature range of 930 to 950° C.;
- and
- forming a film made of a second electrode material on the other surface of the silicon carbide substrate, and forming a Schottky electrode by performing heat treatment.
Dependencies are inferred from the claim text.