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US 2011/0256684 A1Published application
Field effect transistor using oxide film for channel and method of manufacturing the same
AssigneeCanon Kabushiki Kaisha
InventorsTatsuya Iwasaki, Hideya Kumomi
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Abstract
The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added.
Claims4
1-7. (canceled)
A method of manufacturing a field effect transistor including an oxide film as a semiconductor layer, comprising the steps of:
- forming the oxide film on a substrate;
- and
- adding one of hydrogen and deuterium to a portion of the oxide film to form a source part and a drain part.
A method of manufacturing a field effect transistor including an oxide film as a semiconductor layer, comprising the steps of:
- forming the oxide film on a substrate;
- forming a gate insulating film on the oxide film;
- forming a gate electrode on the gate insulating film;
- and
- adding one of hydrogen and deuterium to the oxide film with using a pattern of the gate electrode as a mask to form a source part and a drain part in the oxide film in self-alignment with the pattern of the gate electrode.
2 more elements
(canceled)
Dependencies are inferred from the claim text.