Method of manufacturing a high-performance semiconductor device
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsHuilong Zhu, Wenwu Wang
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Abstract
The present invention relates to a method of manufacturing a semiconductor device, wherein the method comprises: providing a substrate; forming a source region, a drain region, a dummy gate structure, and a gate dielectric layer on the substrate, wherein the dummy gate structure is between the source region and the drain region on the substrate, and the gate dielectric layer is between the substrate and the dummy gate structure; annealing the source region and the drain region; removing the dummy gate structure to form an opening; implanting dopants into the substrate from the opening to form a steep retrograded well; annealing to activate the dopants; and forming a metal gate on the gate dielectric layer by deposition.
Claims15
A method of manufacturing a semiconductor device, comprising:
- a) providing a substrate;
- b) forming a source region, a drain region, a dummy gate structure, and a gate dielectric layer on the substrate, wherein the dummy gate structure is between the source region and the drain region on the substrate, and the gate dielectric layer is between the substrate and the dummy gate structure;
- c) annealing the source region and the drain region;
- d) removing the dummy gate structure to form an opening;
- e) implanting dopants into the substrate from the opening to form a steep retrograded well;
- f) annealing to activate the dopants;
- and
- g) forming a metal gate on the gate dielectric layer by deposition.
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Dependencies are inferred from the claim text.