Back to results
US 2011/0256388 A1Published application
Method for fabricating semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorsKwan-Yong LIM, Min-Gyu SUNG, Heung-Jae CHO
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device includes a titanium layer and a titanium nitride layer formed on a substrate, a thin layer formed on the titanium nitride layer, and a metal layer formed on the thin layer, wherein the thin layer increases a grain size of the metal layer.
Claims6
A semiconductor memory device, comprising:
- a titanium layer and a titanium nitride layer formed on a substrate;
- a thin layer formed on the titanium nitride layer;
- and
- a metal layer formed on the thin layer, wherein the thin layer increases a grain size of the metal layer.
1 more element
6-15. (canceled)
Dependencies are inferred from the claim text.