Bonding film-attached substrate and bonding film-attached substrate manufacturing method
AssigneeSeiko Epson Corporation
InventorsFumitake MATSUZAKI, Mitsuru MIYABARA, Takehiko UEHARA
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Abstract
A bonding film-attached substrate includes: a substrate whose main component is not silicon dioxide, or that does not have a Si-group skeleton; a silicon oxide film formed on a surface of the substrate and adjacent to the substrate using a vapor-phase deposition method, and that has a thickness of from 100 nm to 2,000 nm, inclusive; and a bonding film provided by plasma polymerization, wherein the bonding film includes (i) a Si skeleton that contains a siloxane (Si—O) bond, and has a crystallinity of 45% or less, and (ii) an elimination group that binds to the Si skeleton, the elimination group being an organic group.
Claims17
A bonding film-attached substrate, comprising:
- a substrate whose main component is not silicon dioxide, or that does not have a Si-group skeleton;
- a silicon oxide film formed on a surface of the substrate and adjacent to the substrate using a vapor-phase deposition method, and that has a thickness of from 100 nm to 2,000 nm, inclusive;
- and
- a bonding film provided by plasma polymerization, wherein the bonding film includes (i) a Si skeleton that contains a siloxane (Si—O) bond, and has a crystallinity of 45% or less, and (ii) an elimination group that binds to the Si skeleton, the elimination group being an organic group.
Dependencies are inferred from the claim text.