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US 2011/0255349 A1Published application
Method of operating non-volatile memory cell
AssigneeMacronix International Co., Ltd.
InventorChao-I Wu
Life of this patent
Estimating the term…
Abstract
A method of operating a memory cell for 3D array of this invention is described as follows. Carriers of a first type are injected into a charge storage layer of the memory cell by applying a double-side biased (DSB) voltage to double sides of the memory cell. Carriers of a second type are injected into the charge storage layer by applying FN voltages.
Claims15
A method of operating a memory cell for 3D array, comprising:
- injecting carriers of a first type into a charge storage layer of the memory cell by applying a double-side biased (DSB) voltage to double sides of the memory cell;
- and
- injecting carriers of a second type into the charge storage layer by applying FN voltages.
A method of operating a memory cell for 3D array, comprising:
- lowering a threshold voltage value of the memory cell by applying a DSB voltage to double sides of the memory cell;
- and
- increasing the threshold voltage of the memory cell by applying FN voltage.
Dependencies are inferred from the claim text.