Flash memory device and system including the same

A nonvolatile memory device comprising:

• a memory cell array including a plurality of memory blocks, each of the plurality memory blocks having a plurality of pages;
• a read/write circuit configured to repetitively program a selected page among a selected memory block until a program pass;
• and
• a control logic configured to control the read/write circuit and count a loop number of the programmed page,
• wherein the memory cell array configures to store reference loop information which is based on wear-level information of the memory cell array, and the selected memory block is determined to be invalid according to a result of comparing the counted loop number with the reference loop information.

A nonvolatile memory system comprising:

• a nonvolatile memory device including a plurality of memory blocks, each of the plurality of memory blocks having a plurality of pages;
• and
• a memory controller configured to manage wear-leveling information of the nonvolatile memory device, and generate reference loop information according to the wear-leveling information, wherein
• the nonvolatile memory device is configured to program a selected page in a selected memory block and provide a loop number of the programmed page to the memory controller, according to a control of the memory controller, and
• the memory controller is configured to compare the loop number with the reference loop information and determine the selected memory block to be invalid according to the comparison result.