Semiconductor light emitting device and method for manufacturing semiconductor light emitting device, and lamp

Abstract

A semiconductor light-emitting device (1) of the present invention includes: a substrate (101); a laminated semiconductor layer (20) containing a light-emitting layer, which is formed on the substrate (101); a first electrode (111) formed on the upper surface (106c) of the laminated semiconductor layer (20); and a second electrode (108) formed on an exposed surface (104c) that is formed by partially cutting the laminated semiconductor layer (20), wherein the first electrode (111) includes a transparent electrode (109) containing a hole portion (109a) through which the upper surface (106c) of the laminated semiconductor layer (20) is exposed, a junction layer (110) formed on a bottom surface (109b) and an inner wall (109d) of the hole portion (109a), and a bonding pad electrode (120) formed to cover the junction layer (110).

Dependencies are inferred from the claim text.