Laser irradiation apparatus and manufacturing method of semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKoichiro TANAKA, Hirotada OISHI
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Abstract
A deflecting mirror which deflects a laser beam emitted from a laser oscillator, a transfer lens, a cylindrical lens array which divides the laser beam having passed through the transfer lens into a plurality of laser beams, and a condensing lens which superposes the laser beams formed in the cylindrical lens array are included. The following formula is satisfied: 1/f=1/(a+b)+1/c, when: “a” is a distance between an emission opening of the laser oscillator and the deflecting mirror; “b” is a distance between the deflecting mirror and the transfer lens; “c” is a distance between the transfer lens and an incidence plane of the cylindrical lens array; and “f” is a focal length of the transfer lens.
Claims9
A laser irradiation apparatus comprising:
- a laser oscillator which emits a Gaussian beam;
- a deflecting mirror which deflects the Gaussian beam having been emitted from the laser oscillator;
- a transfer lens which transfers the Gaussian beam having been deflected at the deflecting mirror;
- a cylindrical lens array which divides the Gaussian beam having passed through the transfer lens into a plurality of Gaussian beams;
- a condensing lens which superposes the Gaussian beams formed by the cylindrical lens array;
- and
- a stage over which an irradiation surface for projecting the Gaussian beam having passed through the condensing lens is positioned.
A manufacturing method of a semiconductor device, comprising the steps of:
- projecting a laser beam emitted from a laser oscillator onto a cylindrical lens array by using a transfer lens;
- dividing the laser beam by using the cylindrical lens array;
- superposing the divided laser beams by a condensing lens;
- and
- crystallizing a semiconductor film by irradiating with the superposed laser beam.
A manufacturing method of a semiconductor device, comprising the steps of:
- projecting a laser beam emitted from a laser oscillator onto a cylindrical lens array by using a transfer lens;
- dividing the laser beam by using the cylindrical lens array;
- superposing the divided laser beams by a condensing lens;
- and
- crystallizing a semiconductor film by irradiating with the superposed laser beam,
- wherein the transfer lens is provided in a position which allows an emission opening of the laser oscillator and an incidence plane of the cylindrical lens array to be conjugated to each other.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a semiconductor film;
- correcting a displacement of a laser beam emitted from a laser oscillator and projecting the laser beam onto a cylindrical lens array by using a transfer lens;
- dividing the laser beam by using the cylindrical lens array;
- superposing the divided laser beams by a condensing lens;
- and
- crystallizing the semiconductor film by irradiating with the superposed laser beam.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a semiconductor film;
- correcting a displacement of a laser beam emitted from a laser oscillator and projecting the laser beam onto a cylindrical lens array by using a transfer lens;
- dividing the laser beam by using the cylindrical lens array;
- superposing the divided laser beams by a condensing lens;
- crystallizing the semiconductor film by irradiating with the superposed laser beam;
- and
- adding an impurity element into the crystallized semiconductor film to form a source region and a drain region.
Dependencies are inferred from the claim text.