Compositions and processes for immersion lithography
AssigneeRohm and Haas Electronic Materials LLC
InventorDeyan WANG
Life of this patent
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Abstract
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
Claims19
1-10. (canceled)
A coated substrate system comprising:
- (a) a substrate having thereon:
- a coating layer of a photoresist composition, the photoresist composition comprising:
- (i) one or more resins which comprise one or more photoacid-labile groups,
- (ii) a photoactive component, and
- (iii) one or more resins that (1) comprise one or more photoacid-labile groups and (2) are substantially non-mixable with the (i) one or more resins, whereby the (iii) one or more resins migrate toward upper portions of a coating layer of the photoresist composition layer during application of the photoresist on the substrate;
- and
- (b) an immersion lithography apparatus.
A coated substrate comprising:
- (a) a substrate having thereon:
- a coating layer of a photoresist composition, the photoresist composition comprising:
- (i) one or more resins which comprise one or more photoacid-labile groups,
- (ii) a photoactive component, and
- (iii) one or more resins that comprise 1) Si substitution, 2) fluorine substitution, 3) hyperbranched polymers;
- and/or 4) polymeric particles, whereby the (iii) one or more resins migrate toward upper portions of a coating layer of the photoresist composition layer during application of the photoresist on the substrate;
- and
- (b) an immersion lithography apparatus.
A photoresist composition for immersion lithography, comprising:
- (i) one or more resins,
- (ii) a photoactive component, and
- (iii) one or more resins that are substantially non-mixable with the one or more resins.
Dependencies are inferred from the claim text.