Multilayered structure
OwnerHenry H. Radamsoninventor
Life of this patent
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Abstract
A thermistor structure includes a multilayer structure of at least one quantum layer surrounded by barrier layers in a multilayer structure. The quantum layer includes Ge and may be in the form of either a quantum well or quantum dots. The barrier layer is a carbon-doped Si layer, and the thermistor is intended to provide a way to compensate for the strain in a multilayer IR-detector structure through carbon doping of the quantum layer and barrier layers.
Claims20
1-16. (canceled)
A thermistor structure comprising at least one multilayer structure comprising a set of alternating layers, a first layer A (60) comprising Si and a second layer B (50) comprising Ge, for use as a barrier layer and a quantum layer respectively, said layers in the multilayer structure being in the sequence
- A:B:Δ:A
- where
- Δ=n×(A:B);
- n≧0
- where the first layer A (60) is a Si1-yCy layer where the composition of the Si1-yCy layer is given by 0.005≦y≦0.035, characterized in that
- the second layer B (50) is a Si1-x-zGexSnz layer with the composition given by
- 0.20≦x<1.00
- 0<z≦0.2.
A method of fabricating a thermistor structure comprising at least one set of alternating layers, a first layer A with a composition Si1-yCy and a second layer B (50) with a composition Si1-x-zGexSnz, for use as a barrier layer and a quantum well layer respectively, said layers in the multilayer structure being in the sequence
- A:B:Δ:A
- where
- Δ=n×(A:B);
- n≧0
- and
- 0.20≦x<1.00
- 0.005≦y≦0.035
- 0<z≦0.2
- comprising the steps of:
- providing a substrate
- placing the substrate in a deposition chamber
- evacuate the deposition chamber to a pressure <10−10 Torr
- introducing gases for deposition through gas inlets into the deposition chamber
- deposit a desired number of layers according to A:B:Δ:A using a deposition method
- evacuate the chamber
- ventilate the chamber.
Dependencies are inferred from the claim text.