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US 2011/0254587 A1Published application
Software Programmable Logic Using Spin Transfer Torque Magnetoresistive Devices
AssigneeQUALCOMM Incorporated
InventorsLew Chua-Eoan, Matthew Nowak, Seung H. Kang
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Abstract
Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.
Claims14
A programmable logic array, comprising:
- a first group of spin transfer torque magnetic tunnel junction (MTJ) devices arranged in an array forming an input plane;
- a second group of MTJ devices arranged in a column forming an output plane, wherein the input plane and the output plane are combined to form a logic function based on a resistance state of each MTJ device;
- a plurality of programmable sources coupled to corresponding MTJ devices, wherein the programmable sources are configure to program the resistance state of corresponding MTJ devices;
- and
- a sense amplifier coupled to the output plane configured to detect a voltage level on the column and to generate a binary output voltage based on a comparison of the voltage level on the column to a threshold voltage.
2 more elements
Dependencies are inferred from the claim text.