Semiconductor Device and Method of Forming Conductive Vias with Trench in Saw Street

A semiconductor device, comprising:

• a semiconductor wafer having a plurality of semiconductor die separated by a peripheral region;
• a plurality of vias formed in the semiconductor wafer;
• a trench formed in the peripheral region of the semiconductor wafer;
• a first conductive layer deposited in the trench and vias to form conductive vias;
• and
• a second conductive layer formed over a first surface of the semiconductor die, the second conductive layer being electrically connected to the first conductive layer.

A semiconductor device, comprising:

• a semiconductor wafer having a plurality of semiconductor die containing an active region separated by a non-active peripheral region;
• a via formed in the semiconductor wafer partially within the active region and partially within the non-active peripheral region;
• a trench formed along a length of the non-active peripheral region of the semiconductor wafer;
• and
• a first conductive layer deposited in the trench and via to form a conductive via.

A method of making a semiconductor device, comprising:

• providing a semiconductor wafer having a plurality of semiconductor die separated by a peripheral region;
• forming a plurality of vias in the semiconductor wafer;
• forming a trench in the peripheral region of the semiconductor wafer;
• depositing a first conductive layer in the trench and vias to form conductive vias;
• and
• forming a second conductive layer over a first surface of the semiconductor die, the second conductive layer being electrically connected to the first conductive layer.