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US 2011/0254169 A1Published application
Semiconductor device with through substrate via
AssigneeNanya Technology Corporation
InventorShian-Jyh Lin
Life of this patent
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Abstract
A through substrate via having a low stress is provided. The through substrate via is positioned in a substrate. The through substrate via includes: an outer tube penetrating the substrate; at least one inner tube disposed within the outer tube; a dielectric layer lining on a side wall of the outer tube, and a side wall of the inner tube; a strength-enhanced material filling the inner tube; and a conductive layer filling the outer tube.
Claims16
A semiconductor device with a through substrate via comprising:
- a substrate;
- and
- a through substrate via penetrating the substrate, wherein the through substrate via comprises:
- an outer tube penetrating the substrate;
- at least one inner tube disposed within the outer tube;
- a dielectric layer lining on a side wall of the outer tube, and a side wall of the inner tube;
- a strength-enhanced material filling the inner tube;
- and
- a conductive layer filling the outer tube.
6 more elements
A method of fabricating a semiconductor device with a through substrate via, comprising:
- providing a substrate;
- patterning the substrate to form at least one inner tube in the substrate;
- forming a first dielectric layer on a side wall of the inner tube;
- forming a strength-enhanced material filling the inner tube;
- patterning the substrate to form an outer tube, wherein the inner tube is surrounded by the outer tube;
- forming a second dielectric layer on the side wall of the inner tube, and a side wall of the outer tube;
- and
- filling the outer tube with a conductive layer.
5 more elements
Dependencies are inferred from the claim text.