US 2011/0254165 A1 · SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PRODUCTION METHOD THEREOF

Abstract

In processes after a TSV is formed, occasionally, cracks appear in an insulation film after the insulation film that is a film for preventing Cu from diffusing is formed and the exposed Cu discolors at a succeeding process of pattern forming such as etching or asking. It is estimated that the problems occur because the volume of Cu expands by heat history at the process of forming a diffusion preventive film. When such film cracking occurs, various problems such as the destruction of the function of a Cu diffusion preventive film and conduction fault with upper wiring caused by the oxidation of Cu at the upper part of a TSV are induced. In the invention of the present application, in a semiconductor integrated circuit device having a through electrode, when a through via is formed after a pre-metal wiring layer is formed, an insulation film of a kind of silicon nitride is used as a metal diffusion preventive insulation film at the interface of an interlayer insulation film touching the top end of the through electrode and an insulation film of kind of silicon carbide is used as a metal diffusion preventive insulation film at the interfaces of the other interlayer insulation films.

Claims20

Dependent claims

A semiconductor integrated circuit device comprising:

(a) a semiconductor substrate having a first main surface and a second main surface;
(b) a semiconductor element forming region and a through via forming region formed on the side of the first main surface;
(c) a pre-metal wiring layer formed over the first main surface;
(d) three or more embedded wiring layers formed over the pre-metal wiring layer;
(e) a pad wiring layer formed over the three or more embedded wiring layers;
(f) metal diffusion preventive insulation films formed at a plurality of interfaces over the pre-metal wiring layer and between the embedded wiring layers respectively;
and
(g) a through electrode being formed in the through via forming region, at least passing through the pre-metal wiring layer, and reaching the second main surface of the semiconductor substrate,
wherein, at the interfaces, a first insulation film of a kind of silicon nitride is formed as the metal diffusion preventive insulation film at the interface touching the top end of the through electrode, and insulation films of a kind of silicon carbide are formed as the metal diffusion preventive insulation films at the other interfaces respectively.

6 more elements

A method for producing a semiconductor integrated circuit device comprising:

(a) a semiconductor substrate having a first main surface and a second main surface;
(b) a semiconductor element forming region and a through via forming region formed on the side of the first main surface;
(c) a pre-metal wiring layer being formed over the first main surface and having a pre-metal insulation film and a metal plug embedded into an aperture thereof;
(d) three or more embedded wiring layers being formed over the pre-metal wiring layer and having interlayer insulation films and wirings embedded into the apertures thereof respectively;
(e) a pad wiring layer formed over the three or more embedded wiring layers;
(f) metal diffusion preventive insulation films formed at a plurality of interfaces over the pre-metal wiring layer and between the embedded wiring layers respectively;
and
(g) a through electrode being formed in the through via forming region, at least passing through the pre-metal wiring layer, and reaching the second main surface of the semiconductor substrate,
wherein at the interfaces, a first insulation film of a kind of silicon nitride is formed as the metal diffusion preventive insulation film at the interface touching the top end of the through electrode, and insulation films of a kind of silicon carbide are formed as the metal diffusion preventive insulation films at the other interfaces respectively, and
wherein an electrode that is to be the through electrode is embedded after the insulation films of the wiring layers below the interface touching the top end of the through electrode are formed and before the wiring layers above the interface touching the top end of the through electrode are formed.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor integrated circuit device and production method thereof

Life of this patent

Semiconductor integrated circuit device and production method thereof

Life of this patent

Abstract

Claims20