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US 2011/0254151 A1Published application
Method for fabricating bump structure without ubm undercut
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Wei LIN, Ming-Da CHENG, Wen-Hsiung LU, Chung-Shi LIU
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Abstract
A method for fabricating bump structure without UBM undercut uses an electroless Cu plating process to selectively form a Cu UBM layer on a Ti UBM layer within an opening of a photoresist layer. After stripping the photoresist layer, there is no need to perform a wet etching process on the Cu UBM layer, and thereby the UBM structure has a non-undercut profile.
Claims20
A method of forming a semiconductor device, comprising:
- providing a substrate;
- forming a first under-bump metallurgy (UBM) layer on the substrate;
- forming a mask layer on the first UBM layer, wherein the mask layer has an opening exposing a portion of the first UBM layer;
- and
- performing an electroless plating process to form a second UBM layer on the exposed portion of the first UBM layer within the opening of the mask layer.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a first under-bump metallurgy (UBM) layer formed on the semiconductor substrate;
- a second UBM layer formed on the first UBM layer;
- and
- a palladium layer formed at an interface between the first UBM layer and the second UBM layer.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a first under-bump metallurgy (UBM) layer formed on the semiconductor substrate;
- a second UBM layer formed on the first UBM layer;
- and
- a conductive material layer formed on the second UBM layer;
- wherein the second UBM layer is a palladium-containing copper alloy layer.
3 more elements
Dependencies are inferred from the claim text.