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US 2011/0254140 A1Published application
Photoresists and methods for use thereof
AssigneeRohm and Haas Electronic Materials LLC
InventorGerhard POHLERS
Life of this patent
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Abstract
New photoresists are provided that comprise preferably as distinct components: a resin, a photoactive component and a phenolic component Preferred photoresists of the invention are can be useful for ion implant lithography protocols.
Claims8
A method for providing an ion-implanted semiconductor substrate comprising:
- providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,
- wherein the photoresist comprises a resin, a photoactive component and a phenolic component;
- and
- applying ions to the substrate.
1 more element
A coated substrate comprising:
- a semiconductor wafer having coated thereon a relief image of chemically-amplified positive-acting photoresist composition that comprises as distinct components (1) a resin, (2) a photoactive component and (3) a phenolic component;
- and
- the wafer having applied dopant ions.
A method for forming a photoresist relief image comprising:
- (a) applying on a substrate a photoresist comprising a resin, a photoactive component and a phenolic component;
- and
- (b) exposing the photoresist coating layer to patterned activating radiation.
A photoresist composition comprising a non-phenolic resin, a photoactive component and a phenolic component.
Dependencies are inferred from the claim text.