# US 2011/0254138 A1 · Low-temperature absorber film and method of fabrication > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2011/0254138 A1 - Document ID: US20110254138A1 - Status: Published application - Kind: A1 - Application number: 12/760,620 - Filed: 2010-04-15 - Published: 2011-10-20 - Earliest claimed: 2010-04-15 - Assignees: International Business Machines Corporation - Inventors: Katherina E. Babich; Pratik P. Joshi; Kam Leung Lee; Deborah A. Neumayer; Spyridon Skordas - Web page: https://patentgrep.com/patent/US20110254138A1 ## CPC - H10P 14/6902: {composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon} - H10D 30/797: {being in source or drain regions, e.g. SiGe source or drain} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 30/204: {into Group IV semiconductors} - H10P 30/208: {of electrically inactive species} - H10P 30/225: {of a molecular ion, e.g. decaborane} - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - H10P 34/422: {using incoherent radiation} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract An improved low-temperature absorber, amorphous carbonitride (ACN) with an extinction coefficient (k) of greater than 0.15, and an emissivity of greater than 0.8 is disclosed. The ACN film can also be characterized as having a minimum of hydrocarbon content as observed by FTIR. The ACN film can be used as an effective absorbing layer that absorbs a wide range of electromagnetic radiation from different sources including lasers or flash lamps. A method of forming such an ACN film at a deposition temperature of less than, or equal to, 450° C. is also provided. ## Claims ### Claim 1 An electromagnetic absorber comprising an amorphous carbonitride film having an extinction coefficient of greater than 0.2 and an emissivity of greater than 0.8. ### Claim 2 (depends on 1) The electromagnetic absorber of claim 1 wherein said amorphous carbonitride film has a normalized hydrocarbon content less than 3 as defined by integrating under a C—H stretching peak in a FTIR spectra from 3170-2750 cm−3 and dividing the integrated peak area by film thickness in microns. ### Claim 3 (depends on 1) The electromagnetic absorber of claim 1 wherein said amorphous carbonitride film includes a gradient carbonitride film having an adhesion promoting layer located on a surface thereof. ### Claim 4 (depends on 1) The electromagnetic absorber of claim 1 wherein said amorphous carbonitride film absorbs electromagnetic radiation having at least one wavelength between 190 nm and 1000 nm. ### Claim 5 A structure comprising an amorphous carbonitride film disposed on an upper surface of a substrate, wherein said amorphous carbonitride film has an extinction coefficient greater than 0.2 and an emissivity of greater than 0.8. ### Claim 6 (depends on 5) The structure of claim 5 wherein said amorphous carbonitride film has a normalized hydrocarbon content less than 3 as defined by integrating under a C—H stretching peak in a FTIR spectra from 3170-2750 cm−1 and dividing the integrated peak area by film thickness in microns. ### Claim 7 (depends on 5) The structure of claim 5 wherein said amorphous carbonitride film includes a gradient carbonitride film having an adhesion promoting layer located on a surface thereof. ### Claim 8 (depends on 5) The structure of claim 5 wherein said amorphous carbonitride film absorbs electromagnetic radiation having at least one wavelength between 190 nm and 1000 nm. ### Claim 9 (depends on 5) The structure of claim 5 wherein said substrate includes a semiconductor material, a dielectric material, a conductive material or any multilayered combination thereof. ### Claim 10 A method comprising: depositing an amorphous carbonitride film on an upper surface of a substrate at a deposition temperature of less than, or equal to 450° C., wherein said amorphous carbonitride film has an extinction coefficient of greater than 0.2 and an emissivity of greater than 0.8. ### Claim 11 (depends on 10) The method of claim 10 wherein said depositing comprises: positioning said substrate within a reactor chamber of a deposition apparatus; introducing a reactant gas mixture including at least a carbon precursor source, a nitrogen source, and an oxidant into said reactor chamber; and generating a plasma from said reactant gas mixture. ### Claim 12 (depends on 11) The method of claim 11 wherein said carbon precursor source includes an alkane, an alkene, an alkyne or mixtures thereof, said nitrogen source includes nitrogen, ammonia, an amine, an azides, and/or a hydrazine, and said oxidant includes oxygen, nitrous oxide, water, and/or ozone. ### Claim 13 (depends on 11) The method of claim 11 wherein said reactant gas mixture further comprises an inert gas including helium and argon, said inert gas being introduced at a flow rate from 500 sccm to 50000 sccm. ### Claim 14 (depends on 10) The method of claim 10 wherein said generating the plasma includes selecting a LFRF or HFRF plasma source at 100 MHz or 13.56 GHz, respectively. ### Claim 15 (depends on 10) The method of claim 10 wherein said generating the plasma includes first depositing an adhesion promoting layer, and second depositing the amorphous carbonitride film on the adhesion promoting layer. ### Claim 16 (depends on 10) The method of claim 10 wherein said depositing comprises: positioning said substrate within a reactor chamber of a deposition apparatus; introducing a reactant gas mixture including at least a carbon precursor source, and a nitrogen source, into said reactor chamber; and generating a plasma from said reactant gas mixture. ### Claim 17 (depends on 16) The method of claim 16 wherein said carbon precursor source includes an alkane, an alkene, an alkyne or mixtures thereof, and said nitrogen source includes nitrogen, ammonia, an amine, an azide, and/or a hydrazine. ### Claim 18 (depends on 16) The method of claim 16 wherein said reactant gas mixture further comprises an inert gas including helium and argon, said inert gas being introduced at a flow rate from 500 sccm to 50000 sccm. ### Claim 19 (depends on 16) The method of claim 16 wherein said generating the plasma includes selecting a LFRF or HFRF plasma source at 100 MHz or 13.56 GHz, respectively. ### Claim 20 (depends on 10) The method of claim 10 wherein said depositing comprises: positioning said substrate within a reactor chamber of a deposition apparatus; introducing a reactant gas mixture including at least a precursor which contains carbon and nitrogen; and generating a plasma from said reactant gas mixture. ### Claim 21 (depends on 20) The method of claim 20 wherein said carbon and nitrogen precursor source includes an carbon and nitrogen containing heterocyclic compounds, amines, alkylazo compounds, acetonitile and amidines. ### Claim 22 (depends on 20) The method of claim 20 wherein said reactant gas mixture further comprises an inert gas including helium and argon, said inert gas being introduced at a flow rate from 500 sccm to 50000 sccm. ### Claim 23 (depends on 20) The method of claim 20 wherein said reactant gas mixture further comprises an oxidizing gas includes oxygen, nitrous oxide, water, and/or ozone, said oxidizing gas being introduced at a flow rate from 500 sccm to 50000 sccm. ### Claim 24 (depends on 20) The method of claim 20 wherein said generating the plasma includes selecting a LFRF or HFRF plasma source at 100 MHz or 13.56 GHz, respectively. ### Claim 25 (depends on 10) The method of claim 10 further comprising performing flash annealing or laser annealing to activate a doped source region and a doped drain region within said substrate.