Semiconductor device
AssigneePanaconic Corporation
InventorsMakoto TSUTSUE, Masaki Utsumi
Life of this patent
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Abstract
A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in which an interconnect and a plug connected to the interconnect are integrated is formed in at least one of the dielectric films in the chip region. Part of the seal ring structure formed in the dielectric film in which the dual damascene interconnect is formed is continuous. A protection film formed on the multilayer structure has an opening on the seal ring. A cap layer connected to the seal ring is formed in the opening.
Claims16
1-13. (canceled)
A semiconductor device comprising:
- an element formed on a substrate in a chip region;
- a plurality of dielectric films formed on the substrate;
- a first seal ring and a second seal ring provided so as to pass through the plurality of dielectric films and surround the chip region;
- a protection film formed on a first dielectric film which is the uppermost film in the plurality of dielectric films;
- a first opening provided in the protection film and formed on the first seal ring;
- and
- a cap layer arranged in the first opening and in contact with the first seal ring,
- wherein the second seal ring is formed closer to the chip region than the first seal ring, and all of an upper surface of the second seal ring is covered by the protection film, and
- a portion of the first opening is formed above a portion of the first dielectric film located opposite to the chip region with respect to a portion of the first seal ring formed in the first dielectric film.
A semiconductor device comprising:
- an element formed on a substrate in a chip region;
- a plurality of dielectric films formed on the substrate;
- a first seal ring and a second seal ring provided to pass through the plurality of dielectric films along a vertical axis and surround the chip region;
- a protection film formed on a first dielectric film which is uppermost in the plurality of dielectric films;
- a first opening provided in the protection film and formed on the first seal ring;
- and
- a cap layer formed in the first opening and in contact with the first seal ring,
- wherein the second seal ring is formed closer to the chip region than the first seal ring, and all of an upper surface of the second seal ring is covered by the protection film, and
- on a plane forming an interface between the protection film and the first dielectric film, a part of the protection film located at a periphery of the first opening opposite the chip region is arranged outside the vertical axis on which the first seal ring is formed.
A semiconductor device comprising:
- an element formed on a substrate in a chip region;
- a plurality of dielectric films formed on the substrate;
- a first seal ring and a second seal ring, the first seal ring surrounding the second seal ring, the first seal ring and second seal ring being formed through the plurality of dielectric films in a peripheral part of the chip region and surrounding the chip region;
- and
- a protection film formed on a first dielectric film, the first dielectric film being the uppermost of the plurality of dielectric films,
- a first opening provided in the protection film and formed on the first seal ring, and
- a cap formed in the opening connected to the first seal ring, arranged such that it covers all of the top surface of the first seal ring.
Dependencies are inferred from the claim text.