Method of Group III Metal - Nitride Material Growth Using Metal Organic Vapor Phase Epitaxy

Abstract

The non-polar or semi-polar Nitride film is grown using Metal Organic Vapor Phase Epitaxy over a substrate. The in-situ grown seed layer comprising Magnesium and Nitrogen is deposited prior to the Nitride film growth. The said seed layer enhances the crystal growth of the Nitride material and makes it suitable for electronics and optoelectronics applications. The use of non-polar and/or semi-polar epitaxial films of the Nitride materials allows avoiding the unwanted effects related to polarization fields and associated interface and surface charges, thus significantly improving the semiconductor device performance and efficiency. In addition, the said seed layer is also easily destroyable by physical or chemical stress, including the ability to dissolve in water or acid, which makes the substrate removal process available and easy. The substrate removal provides the possibility to achieve exceptional thermal conductivity and application flexibility, such as additional contact formation, electromagnetic radiation extraction, packaging or other purposes suggested or discovered by the skilled artisan.

Dependencies are inferred from the claim text.