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US 2011/0254133 A1Published application
Photoresists and methods for use thereof
AssigneeRohm and Haas Electronic Materials LLC
InventorGerhard POHLERS
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Abstract
New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.
Claims10
A method for providing an ion-implanted semiconductor substrate comprising:
- providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist composition,
- wherein the photoresist comprises a resin, a photoactive component and an adhesion-promoting component that comprise one or more Si-containing groups;
- and
- applying ions to the substrate.
1 more element
A coated substrate comprising:
- a semiconductor wafer having coated thereon a relief image of chemically-amplified positive-acting photoresist composition that comprises a resin, a photoactive component and an adhesion-promoting component;
- and
- the wafer having applied dopant ions.
A method for forming a photoresist relief image comprising:
- (a) applying on a substrate a photoresist comprising a resin, a photoactive component and an adhesion-promoting component that comprise one or more Si-containing groups;
- and
- (b) exposing the photoresist coating layer to patterned activating radiation.
A photoresist composition comprising:
- a resin, a photoactive component and an adhesion-promoting component.
Dependencies are inferred from the claim text.