Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a memory portion including a plurality of memory cells each including an antifuse;
• a semiconductor integrated circuit portion connected to the memory portion;
• an antenna portion connected to the semiconductor integrated circuit portion;
• and
• a first insulator and a second insulator between which the memory portion, the semiconductor integrated circuit portion, and the antenna portion are sandwiched,
• wherein the antifuse includes:
• a first conductive layer;
• an intermediate layer over the first conductive layer, the intermediate layer comprising an insulating layer and a semiconductor layer;
• and
• a second conductive layer over the intermediate layer,
• wherein the insulating layer is a silicon oxynitride film including hydrogen at greater than or equal to 1.2×1021 atoms/cm3 and less than or equal to 3.4×1021 atoms/cm3.

A semiconductor device comprising:

• a plurality of memory cells each including an antifuse,
• wherein the antifuse includes:
• a first conductive layer;
• an intermediate layer over the first conductive layer, the intermediate layer comprising an insulating layer and a semiconductor layer;
• and
• a second conductive layer over the intermediate layer,
• wherein the insulating layer is a silicon oxynitride film including nitrogen at greater than or equal to 3.2×1020 atoms/cm3 and less than or equal to 2.2×1021 atoms/cm3.

A semiconductor device comprising:

• a memory portion including a plurality of memory cells each including an antifuse;
• a semiconductor integrated circuit portion connected to the memory portion;
• an antenna portion connected to the semiconductor integrated circuit portion;
• and
• a first insulator and a second insulator between which the memory portion, the semiconductor integrated circuit portion, and the antenna portion are sandwiched,
• wherein the antifuse includes:
• a first conductive layer;
• an intermediate layer over the first conductive layer, the intermediate layer comprising an insulating layer and a semiconductor layer;
• and
• a second conductive layer over the intermediate layer,
• wherein the insulating layer is a silicon oxynitride film including nitrogen at greater than or equal to 3.2×1020 atoms/cm3 and less than or equal to 2.2×1021 atoms/cm3.

A manufacturing method of a semiconductor device, comprising the steps of:

• forming a semiconductor integrated circuit portion and a memory portion by the steps of:
• forming a metal layer over a substrate;
• forming a metal oxide layer over the metal layer;
• forming a first insulating layer over the metal oxide layer;
• forming a semiconductor layer over the first insulating layer;
• forming a gate insulating layer over the semiconductor layer;
• forming a gate electrode and a first electrode over the gate insulating layer;
• forming a second insulating layer over the gate insulating layer, the gate electrode, and the first electrode;
• forming an opening which reaches the first electrode in the second insulating layer;
• forming an intermediate layer over the first electrode;
• forming an opening which reaches the semiconductor layer in the gate insulating layer;
• and
• forming a source electrode, a drain electrode, and a second electrode, the source electrode and the drain electrode being in contact with the semiconductor layer, and the second electrode being in contact with the intermediate layer;
• forming a third insulating layer over the semiconductor integrated circuit portion and the memory portion;
• forming an antenna portion by forming an antenna over the third insulating layer;
• causing separation at an interface between the first insulating layer and the metal oxide layer or an interface between the metal layer and the metal oxide layer so that the semiconductor integrated circuit portion, the memory portion, and the antenna portion are transferred to a first insulator;
• and
• bonding a second insulator to the first insulator so that the semiconductor integrated circuit portion, the memory portion, and the antenna portion are sandwiched between the first insulator and the second insulator.

A manufacturing method of a semiconductor device, comprising the steps of:

• forming a first electrode over a substrate;
• forming a silicon oxynitride layer over the first electrode with a source gas including silane, dinitrogen monoxide, and ammonia by a plasma CVD method;
• forming a semiconductor layer over the silicon oxynitride layer;
• and
• forming a second electrode over the semiconductor layer,
• wherein the source gas includes ammonia in a range of greater than or equal to 1.6% and less than or equal to 11.1% of a total flow rate.