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US 2011/0254118 A1Published application
Schottky Diode with Control Gate for Optimization of the On State Resistance, the Reverse Leakage, and the Reverse Breakdown
AssigneeTexas Instruments Incorporated
InventorsZia Alan Shafi, Jeffrey A. Babcock
Life of this patent
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Abstract
A Schottky diode optimizes the on state resistance, the reverse leakage current, and the reverse breakdown voltage of the Schottky diode by forming an insulated control gate over a region that lies between the metal-silicon junction of the Schottky diode and the n+ cathode contact of the Schottky diode.
Claims20
A Schottky diode comprising:
- a semiconductor structure having an n-type region, the n-type region having a dopant concentration;
- a first n-type strip that touches the semiconductor structure, the first n-type strip having a dopant concentration that is greater than the dopant concentration of the n-type region;
- a second n-type strip that touches the semiconductor structure, the second n-type strip having a dopant concentration that is greater than the dopant concentration of the n-type region, and being spaced apart from the first n-type strip, no doped region with an n-type and a dopant concentration greater than the dopant concentration of the n-type region touching both the first n-type strip and the second n-type strip;
- a shallow trench isolation (STI) ring that touches the semiconductor structure to laterally enclose the first n-type strip and the second n-type strip;
- a first metal strip that touches a top surface of the first n-type strip;
- a second metal strip that touches a top surface of the second n-type strip;
- and
- a metal region that touches the semiconductor structure, lies laterally between the first metal strip and the second metal strip, and spaced apart from the first metal strip and the second metal strip.
5 more elements
A method of forming a Schottky diode in a semiconductor structure that includes an n-type region, the n-type region having a dopant concentration, the method comprising:
- implanting the semiconductor structure to form a first n-type strip and a second n-type strip in the semiconductor structure, the first n-type strip and the second n-type strip each having a dopant concentration that is greater than the dopant concentration of the n-type region, the second n-type strip being spaced apart from the first n-type strip, no doped region with an n-type and a dopant concentration greater than the dopant concentration of the n-type region touching both the first n-type strip and the second n-type strip;
- depositing a layer of metal;
- and
- reacting the layer of metal to form a first metal strip that touches a top surface of the first n-type strip, a second metal strip that touches a top surface of the second n-type strip, and a metal region that touches the semiconductor structure, lies laterally between the first metal strip and the second metal strip, and spaced apart from the first metal strip and the second metal strip.
1 more element
Dependencies are inferred from the claim text.