St-ram magnetic element configurations to reduce switching current
AssigneeSeagate Technology LLC
InventorsDexin Wang, Dimitar V. Dimitrov, Song S. Xue, Insik Jin
Life of this patent
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Abstract
In order to increase an efficiency of spin transfer and thereby reduce the required switching current, a current perpendicular to plane (CPP) magnetic element for a memory device includes either one or both of a free magnetic layer, which has an electronically reflective surface, and a permanent magnet layer, which has perpendicular anisotropy to bias the free magnetic layer.
Claims21
1-22. (canceled)
A CPP magnetic element for a memory device, the magnetic element comprising:
- a free magnetic layer separated from a reference magnetic layer by a non-magnetic spacer layer;
- and
- a first permanent magnet layer separated from the free layer by a first exchange decoupling layer and located on a side of the free layer which is opposite the spacer layer, the first permanent magnet layer having perpendicular anisotropy for biasing the free layer.
A CPP magnetic element for a memory device, the magnetic element comprising:
- a free magnetic layer separated from a reference magnetic layer by a non-magnetic spacer layer;
- a first conductive layer overlaying a side of the free magnetic layer, which side is opposite the spacer layer;
- and
- a second conductive layer overlaying a side of the reference magnetic layer, which side is opposite the spacer layer, the second conductive layer having an electronically reflective surface interfacing with the reference magnetic layer.
A CPP magnetic element for a memory device, the magnetic element comprising:
- a free magnetic layer separated from a reference magnetic layer by a non-magnetic spacer layer;
- and
- a first permanent magnet layer separated from the free layer by a first exchange decoupling layer and located on a side of the free layer which is opposite the spacer layer, the first permanent magnet layer having perpendicular anisotropy for biasing the free layer, a surface of the free magnetic layer being electronically reflective and interfacing with the first decoupling layer;
- and
- a pinned layer overlaying a side of the reference magnetic layer, which side is opposite the spacer layer, the pinned layer separated from the reference magnetic layer by a Ru layer having an electronically reflective surface interfacing with the reference magnetic layer.
Dependencies are inferred from the claim text.