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AssigneeShanghai Institute of Microsystem and Information Technology, Chinese Academy
InventorsDeyuan Xiao, Xi Wang, Miao Zhang, Jing Chen, Zhongying Xue
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A Ge and Si hybrid material inversion mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a circular-shaped cross section and are formed of n-type Ge and p-type Si, respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. In an inversion mode, current flows through the overall cylindrical channel, so as to achieve high carrier mobility, reduce low-frequency noises, prevent polysilicon gate depletion and short channel effects and increase the threshold voltage of the device.
A hybrid material inversion mode GAA (Gate-All-Around) CMOSFET (Complementary Metal Oxide Semiconductor Field Effect Transistor) comprising a semiconductor substrate, a PMOS region having a first channel, an NMOS region having a second channel, and a gate region, wherein the NMOS region is disposed above the semiconductor substrate, and the PMOS region is disposed above the NMOS region;
A hybrid material inversion mode GAA (Gate-All-Around) CMOSFET (Complementary Metal Oxide Semiconductor Field Effect Transistor) comprising a semiconductor substrate, a PMOS region having a first channel and disposed above the semiconductor substrate, an NMOS region having a second channel and disposed above the PMOS region, and a gate region, wherein the NMOS region and the PMOS region each includes a source region and a drain region located at the two opposite ends of the channel thereof, wherein,
Dependencies are inferred from the claim text.