Semiconductor device

A semiconductor device that has a substrate which contains a single-crystal semiconductor layer at least in a surface layer, and a plurality of circuit blocks constructed in said single-crystal semiconductor layer and made up of circuits containing MOS transistors, said semiconductor device comprising:

• evaluation circuit sections each placed adjacent to each predetermined one of said circuit blocks and formed of MOS transistors of the same configuration as said MOS transistors of said circuit blocks;
• a protective film formed on entire top surfaces of said circuit blocks and said evaluation circuit sections formed in said single-crystal semiconductor layer;
• and
• at least one bump formed on each of appropriate ones of said circuit blocks via said protective film, wherein
• said bump is formed in a position to apply to the MOS transistors stresses which will increase carrier mobility of the MOS transistors in said circuit blocks which are determined to be in need of improvement in electrical characteristics based on measurements of electrical characteristics of the respective evaluation circuit sections.