Semiconductor device and method for forming the same

A semiconductor device comprising:

• a conductive pattern formed over a substrate;
• an interlayer dielectric layer formed over the conductive pattern;
• a contact plug extending through the interlayer dielectric layer to contact the conductive pattern;
• a sub semiconductor layer provided over the contact plug and the interlayer dielectric layer;
• a semiconductor layer provided over the interlayer dielectric layer and the sub semiconductor layer;
• an insulating layer provided over the semiconductor layer;
• a electrode pattern provided over the insulating layer;
• and
• a capping insulating layer pattern covering upper portions of neighboring the electrode pattern provided at side portion of the contact plug.

A method of manufacturing a semiconductor device, the method comprising:

• forming a conductive pattern over a substrate;
• forming a interlayer dielectric layer over the conductive pattern;
• forming a contact plug extending through the interlayer dielecrtric layer to contact the conductive pattern;
• forming a semiconductor layer over the contact plug and the interlayer dielectric layer;
• forming an insulating layer over the semiconductor layer;
• forming a electrode pattern over the insulating layer;
• and
• forming a capping insulating layer pattern covering upper portions of neighboring the electrode pattern at side portion of contact plug.

A method of manufacturing a semiconductor device, the method comprising:

• forming a conductive pattern over a substrate;
• forming a interlayer dielectric layer over the conductive pattern;
• forming a contact plug extending through the interlayer dielecrtric layer to contact the conductive pattern;
• forming a sub semiconductor layer on the interlayer dielectric layer;
• forming a semiconductor layer over the contact plug and the sub semiconductor layer;
• forming an insulating layer over the semiconductor layer;
• forming a electrode pattern over the insulating layer;
• and
• forming a capping insulating layer pattern covering upper portions of neighboring the electrode pattern at side portion of contact plug.