High density flash memory cell device, cell string and fabrication method therefor

A flash memory cell string comprising a plurality of cell devices connected in a row,

• each of the cell devices including:
• a semiconductor substrate;
• a first doping semiconductor area doped with impurities of a first semiconductor type and formed on the semiconductor substrate;
• a second doping semiconductor area doped with impurities of a second semiconductor type which the second semiconductor type is opposite to the first semiconductor type and formed on the first doping semiconductor area;
• a tunneling insulating layer formed on the second doping semiconductor area;
• and
• a charge storage node, a blocking insulating layer, and a control electrode sequentially formed on the tunneling insulating layer,
• wherein the cell string is configured so that insulating layers formed between control electrodes of the cell devices are included, the first doping semiconductor areas of the cell devices are connected to each other, the second doping semiconductor areas of the cell devices are connected to each other, and electrodes for electrical contact with the connected the first and second doping semiconductor areas are included.