Floating gate type nonvolatile memory device and related methods of manufacture and operation

A nonvolatile memory device, comprising:

• a semiconductor pattern comprising a channel region;
• a floating gate formed over the semiconductor pattern and facing the channel region;
• and
• first and second wordlines formed over the semiconductor substrate on opposite sides of the floating gate;
• wherein the floating gate is separated from the semiconductor pattern by a first distance, and the first and second wordlines are separated from the semiconductor pattern by a second distance greater than the first distance.