Transistor and method of fabricating the same
AssigneeIndustrial Technology Research Institute
InventorsJing-Yi Yan, Chu-Yin Hung, Hsiao-Chiang Yao, Yen-Yu Wu, Yen-Shih Huang
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Abstract
A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.
Claims39
A transistor, comprising:
- a dielectric layer having a first surface and a second surface;
- a gate located on the first surface of the dielectric layer;
- an active stacked structure located on the second surface of the dielectric layer, wherein the active stacked structure comprises a first active layer and a second active layer;
- and
- a source and a drain located on the second surface of the dielectric layer and at two sides of the active stacked structure respectively, wherein the source and the drain extend between the first active layer and the second active layer of the active stacked structure.
A method for manufacturing a transistor, comprising:
- forming a gate on a substrate;
- forming a dielectric layer on the gate and the substrate;
- forming a first active layer of an active stacked structure on the dielectric layer;
- forming a source and a drain on the first active layer and the dielectric layer to cover two sides of the first active layer respectively, wherein a space is between the source and the drain and the space exposes the first active layer;
- and
- forming a second active layer of the active stacked structure on the space to cover a portion of the source and a portion of the drain.
A method for manufacturing a transistor, comprising:
- forming a first active layer of an active stacked structure on the substrate;
- forming a source and a drain on the first active layer and the substrate to cover two sides of the first active layer respectively, wherein a space is between the source and the drain and the space exposes the first active layer;
- forming a second active layer of the active stacked structure in the space and to cover a portion of the source and a portion of the drain;
- forming a dielectric layer on the source, the drain, the second active layer and the substrate;
- and
- forming a gate on the dielectric layer.
Dependencies are inferred from the claim text.