Structure and method for manufacturing asymmetric devices

A method of forming a device, comprising:

• forming a plurality of gate electrode structures on a substrate, the gate electrode structures having first sides;
• forming offset spacers on the sides of the gate electrode structures, the offset spacers having second sides;
• forming deep source/drain spacers on the second sides of the offset spacers;
• forming source and drain regions adjacent to the gate electrode structures;
• depositing a first dielectric layer over the gate electrode structures;
• polishing the first dielectric layer to be co-planar with a top of the gate electrode structures;
• removing gate electrodes from the gate electrode structures;
• applying a first photoresist to block gate electrode structures having source regions in a source-down direction;
• performing a first halo implantation in gate structures having source regions in a source-up direction at a first angle;
• removing the first photoresist;
• applying a second photoresist to block gate structures having source regions in a source-up direction;
• performing a second halo implantation in gate structures having source regions in a source-down direction at a second angle;
• removing the second photoresist;
• performing an activation anneal;
• depositing a second dielectric layer over the gate electrode structures;
• forming replacement gate electrodes in each of the gate electrode structures;
• removing the second dielectric layer;
• and
• performing salicide processing.