Group iii nitride semiconductor epitaxial substrate
AssigneeShowa Denko K.K.
InventorsHiroshi Amano, Akira Bando
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Abstract
An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, i.e., an AlxGa1-xN (0≦x≦1) epitaxial substrate succeeding in reducing the generation of cracking or dislocation, and enhancing the crystal quality. More specifically, an object of the present invention is to provide an AlxGa1-xN (0<x≦1) epitaxial substrate useful for a light-emitting device in the ultraviolet or deep ultraviolet region. The inventive Group III nitride semiconductor epitaxial substrate comprises a base and an AlxGa1-xN (0≦x≦1) layer stacked on the base, wherein a layer allowing a crystal having −C polarity and a crystal having +C polarity to coexist is present on the base side of the AlxGa1-xN (0≦x≦1) layer.
Claims12
A Group III nitride semiconductor epitaxial substrate comprising a base and an AlxGa1-xN (0≦x≦1) layer stacked on the base, wherein a layer allowing a crystal having −C polarity and a crystal having +C polarity to coexist is present on the base side of the AlxGa1-xN (0≦x≦1) layer.
Dependencies are inferred from the claim text.