Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device

A method of manufacturing a rod-like light-emitting device comprising steps of:

• forming a catalyst metal island layer on a substrate of a first conductivity type;
• forming a semiconductor core of the first conductivity type having a rod shape on the substrate by crystal growth of a semiconductor of the first conductivity type from an interface between the catalyst metal island layer and the substrate;
• forming a semiconductor layer of a second conductivity type covering a surface of the semiconductor core by performing, under a condition where the catalyst metal island layer is held at a tip of the semiconductor core, crystal growth from an outer peripheral surface of the semiconductor core and an interface between the catalyst metal island layer and the semiconductor core;
• exposing a substrate-side portion of the outer peripheral surface of the semiconductor core;
• and
• separating from the substrate the semiconductor core including the exposed portion exposed in the step of exposing.

A method of manufacturing a rod-like light-emitting device, comprising steps of:

• forming a catalyst metal island layer on a substrate of a first conductivity type;
• forming a semiconductor core of the first conductivity type having a rod shape on the substrate by crystal growth of a semiconductor of the first conductivity type from an interface between the catalyst metal island layer and the substrate;
• forming a quantum well layer covering a surface of the semiconductor core by performing, under a condition where the catalyst metal island layer is held at a tip of the semiconductor core, crystal growth from an outer peripheral surface of the semiconductor core and an interface between the catalyst metal island layer and the semiconductor core;
• forming a semiconductor layer of a second conductivity type covering a surface of the quantum well layer;
• exposing a substrate-side portion of the outer peripheral surface of the semiconductor core;
• and
• separating from the substrate the semiconductor core including the exposed portion exposed in the step of exposing.

A rod-like light-emitting device comprising:

• a semiconductor core of a first conductivity type having a rod shape;
• a cap layer covering an end surface of one of two ends of the semiconductor core;
• and
• a semiconductor layer of a second conductivity type covering an outer peripheral surface of a portion of the semiconductor core other than an exposed portion, the exposed portion of the semiconductor core being a portion opposite from a portion covered with the cap layer of the semiconductor core,
• wherein the cap layer is made of a material having a higher electric resistance than the semiconductor layer.

A rod-like light-emitting device comprising:

• a semiconductor core of a first conductivity type having a rod shape;
• and
• a semiconductor layer of a second conductivity type covering an outer peripheral surface of a portion of the semiconductor core other than an exposed portion, the exposed portion of the semiconductor core being one end portion of the semiconductor core,
• wherein a step portion is provided between an outer peripheral surface of the exposed portion not covered with the semiconductor layer of the semiconductor core and an outer peripheral surface of a covered portion covered with the semiconductor layer of the semiconductor core.

A method of manufacturing a rod-like light-emitting device, comprising steps of:

• a semiconductor core forming step of forming a rod-shaped semiconductor core of a first conductivity type on a substrate;
• a semiconductor layer forming step of forming a cylindrical semiconductor layer of a second conductivity type to cover a surface of the semiconductor core;
• a separating step of separating from the substrate the semiconductor core having the cylindrical semiconductor layer of the second conductivity type formed in the semiconductor layer forming step;
• and
• an exposing step of, after the semiconductor layer forming step and before the separating step, or after the separating step, exposing part of an outer peripheral surface of the semiconductor core.

A method of manufacturing a rod-like light-emitting device, comprising steps of:

• forming on a substrate an insulator having a through-hole;
• forming a semiconductor core of a first conductivity type having a rod shape on a surface of the substrate in a position coincident with the through-hole such that the semiconductor core protrudes from the through-hole;
• forming a semiconductor core of a first conductivity type having a rod shape on a surface of the substrate in a position coincident with the through-hole such that the semiconductor core protrudes from the through-hole;
• forming a semiconductor layer of a second conductivity type to cover the semiconductor core protruding from the through-hole;
• etching the insulator such that part of the insulator remains on at least part of an outer peripheral surface not covered with the semiconductor layer of the semiconductor core, said at least part of the outer peripheral surface not covered with the semiconductor layer being a portion near an outer peripheral surface covered with the semiconductor layer of the semiconductor core;
• and
• separating from the substrate a rod-like light-emitting device having the semiconductor core, the semiconductor layer, and the part of the insulator remaining on the substrate in the insulator etching step.

A method of manufacturing a rod-like light-emitting device, comprising steps of:

• forming on a substrate an underlying layer made of a semiconductor of a first conductivity type;
• forming on the underlying layer an insulator having a through-hole;
• forming a semiconductor core of the first conductivity type having a rod shape on a surface of the underlying layer in a position coincident with the through-hole such that the semiconductor core protrudes from the through-hole;
• forming a semiconductor layer of a second conductivity type to cover the semiconductor core protruding from the through-hole;
• etching the insulator and the underlying layer such that part of the insulator remains on at least part of an outer peripheral surface not covered with the semiconductor layer of the semiconductor core, said at least part of the outer peripheral surface not covered with the semiconductor layer being a portion near an outer peripheral surface covered with the semiconductor layer of the semiconductor core, and such that part of the underlying layer adjacent to a substrate-side end surface of the semiconductor core remains;
• and
• separating from the substrate a rod-like light-emitting device having the semiconductor core, the semiconductor layer, the part of the insulator remaining on the substrate in the etching step, and the part of the underlying layer remaining on the substrate in the etching step.

A rod-like light-emitting device comprising:

• a semiconductor core of a first conductivity type having a rod shape;
• a semiconductor layer of a second conductivity type covering one of two ends of the semiconductor core;
• and
• an insulator covering at least a portion near an outer peripheral surface covered with the semiconductor layer of the semiconductor core, of an outer peripheral surface not covered with the semiconductor layer of the semiconductor core.

A rod-like light-emitting device comprising:

• a semiconductor core of a first conductivity type having a rod shape;
• a semiconductor layer of a second conductivity type covering one of two ends of the semiconductor core;
• an insulator covering at least a portion near an outer peripheral surface covered with the semiconductor layer of the semiconductor core, of an outer peripheral surface not covered with the semiconductor layer of the semiconductor core;
• and
• an underlying layer of the first conductivity type adjoining the other end of the semiconductor core, wherein an end surface of the underlying layer axially opposite from the semiconductor core and a peripheral surface of the underlying layer are exposed.