Light emitting device, method of manufacturing the same, light emitting device package, and lighting system
AssigneeLG Innotek Co., Ltd.
InventorsSung Kyoon Kim, Myeong Soo Kim, Woo Sik Lim
Life of this patent
Estimating the term…
Abstract
Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first light extracting structure formed on an outer portion of the first conductive type semiconductor layer and having a plurality of side surfaces and a plurality of upper surfaces formed in a step structure, and a transmissive layer on the first light extracting structure of the first conductive type semiconductor layer.
Claims20
A light emitting device comprising:
- a light emitting structure layer including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;
- a first light extracting structure disposed on an outer side of the first conductive type semiconductor layer and including a plurality of side surfaces and a plurality of upper surfaces formed in a step structure;
- and
- a transmissive layer on the first light extracting structure of the first conductive type semiconductor layer.
A light emitting device comprising:
- a substrate;
- a light emitting structure layer including a first conductive type semiconductor layer on the substrate, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;
- a first light extracting structure formed at an outer peripheral portion of the first conductive type semiconductor layer and including a plurality of upper surfaces and a plurality of side surfaces formed in a step structure;
- and
- a transmissive layer on the first light extracting structure of the first conductive type semiconductor layer, wherein the upper surfaces provided at the outer peripheral portion of the first conductive type semiconductor layer are Ga-faces.
Dependencies are inferred from the claim text.