Light-emitting devices with vertical light-extraction mechanism

A light-emitting device comprising:

• a n-type layer;
• a p-type layer;
• an light-emitting layer sandwiched between the n-type layer and the p-type layer;
• and
• a lattice structure comprising sheet-shaped sidewalls which penetrate the light-emitting layer and divide the light-emitting layer into a plurality of area units.

A light-emitting device comprising:

• a substrate with a first lattice structure integral with the substrate and extending upward from an upper surface of the substrate;
• a first n-type layer formed over the substrate;
• a second n-type layer formed over the substrate;
• a light-emitting layer formed over the n-type layer;
• a p-type layer formed over the light-emitting layer;
• and
• a second lattice structure vertically spaced from the first lattice structure;
• wherein the first lattice structure is embedded in the first n-type layer and the second lattice structure penetrates the second n-type layer and the light-emitting layer.

A method for fabricating a light-emitting device comprising:

• patterning and etching a substrate to form a lattice structure extending upward from the substrate;
• forming a n-type layer over the substrate so that the lattice structure penetrates the n-type layer;
• forming a light-emitting layer over the n-type layer so that the lattice structure penetrates the light-emitting layer;
• and
• forming a p-type layer over the light-emitting layer so that the lattice structure extends up to the p-type layer or into the p-type layer.

A method for fabricating a light-emitting device comprising:

• forming a material layer over a substrate;
• patterning and etching the material layer to form a lattice structure from the material layer, wherein the lattice structure extends upward from the substrate;
• forming a n-type layer over the substrate so that the lattice structure penetrates the n-type layer;
• forming an light-emitting layer over the n-type layer so that the lattice structure penetrates the light-emitting layer;
• and
• forming a p-type layer over the light-emitting layer so that the lattice structure extends up to or into the p-type layer.

A method for fabricating a light-emitting device comprising:

• patterning and etching a substrate to form a first lattice structure extending upward from the substrate;
• forming a first n-type layer over the substrate so that the lattice structure is embedded in the first n-type layer;
• forming a material layer over the first n-type layer;
• patterning and etching the material layer to form a second lattice structure from the material layer;
• forming a second n-type layer over the first n-type layer so that the second lattice structure penetrates the second n-type layer;
• forming a light-emitting layer over the second n-type layer so that the second lattice structure penetrates the light-emitting layer;
• and
• forming a p-type layer over the light-emitting layer so that the second lattice structure extends up to the p-type layer or into the p-type layer.

A method for fabricating a light-emitting device comprising:

• forming a first material layer over a substrate;
• patterning and etching the material layer to form a first lattice structure from the material layer, wherein the lattice structure extends upward from the substrate;
• forming a first n-type layer over the substrate so that the first lattice structure is embedded in the first n-type layer;
• forming a second material layer over the first n-type layer;
• patterning and etching the material layer to form a second lattice structure from the material layer;
• forming a second n-type layer over the first n-type layer so that the second lattice structure penetrates the second n-type layer;
• forming a light-emitting layer over the second n-type layer so that the second lattice structure penetrates the light-emitting layer;
• and
• forming a p-type layer over the light-emitting layer so that the second lattice structure extends up to the p-type layer or into the p-type layer.