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US 2011/0254020 A1Published application
Device formed hard mask and etch stop layer
AssigneeRobert Bosch GmbH
InventorGary Yama
Life of this patent
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Abstract
A method of etching a device in one embodiment includes providing a silicon carbide substrate, forming a silicon nitride layer on a surface of the silicon carbide substrate, forming a silicon carbide layer on a surface of the silicon nitride layer, forming a silicon dioxide layer on a surface of the silicon carbide layer, forming a photoresist mask on a surface of the silicon dioxide layer, and etching the silicon dioxide layer through the photoresist mask.
Claims12
1-12. (canceled)
A semiconductor device, formed by a process comprising:
- providing a silicon carbide substrate;
- forming a silicon nitride layer on a surface of the silicon carbide substrate;
- forming a silicon carbide layer on a surface of the silicon nitride layer;
- forming a silicon dioxide layer on a surface of the silicon carbide layer;
- forming a photoresist mask on a surface of the silicon dioxide layer;
- and
- etching the silicon dioxide layer through the photoresist mask.
4 more elements
A semiconductor device formed by a process comprising:
- providing a substrate;
- forming a silicon nitride etch stop layer on a surface of the substrate;
- forming a silicon carbide layer on a surface of the silicon nitride etch stop layer;
- forming a hard mask layer on a surface of the silicon carbide layer;
- forming a photoresist mask on the hard mask layer;
- and
- etching the silicon carbide layer through the photoresist mask.
4 more elements
Dependencies are inferred from the claim text.