Manufacturing method for crystal, crystal, and semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorsTaro Nishiguchi, Shin Harada
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Abstract
A manufacturing method for a crystal, a crystal, and a semiconductor device capable of growing a high-quality crystal are provided. The manufacturing method for a crystal of the present invention includes the steps of: preparing a seed crystal having a frontside surface and a backside surface opposite to the frontside surface; fixing the backside surface of the seed crystal to a pedestal; and growing the crystal on the frontside surface of the seed crystal. In the step of fixing, the seed crystal is fixed to the pedestal by coating the backside surface of the seed crystal with a Si layer or disposing a Si layer on the backside surface of the seed crystal, and carbonizing the Si layer.
Claims9
A manufacturing method for a crystal, comprising the steps of:
- preparing a seed crystal having a frontside surface and a backside surface opposite to said frontside surface;
- fixing said backside surface of said seed crystal to a pedestal;
- and
- growing the crystal on said frontside surface of said seed crystal,
- wherein, in said step of fixing, said seed crystal is fixed to said pedestal by coating said backside surface of said seed crystal with a silicon layer or disposing a silicon layer on said backside surface of said seed crystal, and carbonizing said silicon layer.
Dependencies are inferred from the claim text.