Ultra high voltage GaN ESD protection device
AssigneeNational Semiconductor Corporation
InventorVladislav Vashchenko
Life of this patent
Estimating the term…
Abstract
In an ultra high voltage lateral GaN structure having a 2DEG region extending between two terminals, an isolation region is provided between the two terminals to provide for reversible snapback.
Claims20
A GaN ESD protection device comprising
- a first terminal with an ohmic contact or Schottky contact,
- a second terminal with an ohmic contact or Schottky contact,
- a 2D electron gas (2DEG) region between the two terminals, and
- at least one isolation region formed between the two terminals.
The device of 7, wherein the GaN channel region between the first terminal and said at least one isolation region is longer than the length of said isolation region.
A method of controlling the breakdown and triggering voltage of a high voltage GaN ESD protection structure that includes a pair of terminals with ohmic or Schottky contacts connected to a 2DEG region, the method comprising, providing an isolation region between the terminals and varying the breakdown and triggering voltage of the device by varying the length of the isolation region.
A grid voltage GaN structure that includes
- a pair of terminals with ohmic or Schottky contacts,
- a 2DEG region, defined by the junction between a GaN layer and an AlGaN layer, extending between the terminals,
- a vertically extending isolation region formed between the terminals that extends through the 2DEG, and
- a ballast region defined by at least one of the GaN layer and the AlGaN layer extending between the one terminal and the isolation region, the ballast region being longer than the isolation region.
Dependencies are inferred from the claim text.