Wide Band-Gap MOSFETs Having a Heterojunction Under Gate Trenches Thereof and Related Methods of Forming Such Devices
AssigneeCree, Inc.
InventorQingchun Zhang
Life of this patent
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Abstract
Semiconductor switching devices include a first wide band-gap semiconductor layer having a first conductivity type. First and second wide band-gap well regions that have a second conductivity type that is opposite the first conductivity type are provided on the first wide band-gap semiconductor layer. A non-wide band-gap semiconductor layer having the second conductivity type is provided on the first wide band-gap semiconductor layer. First and second wide band-gap source/drain regions that have the first conductivity type are provided on the first wide band-gap well region. A gate insulation layer is provided on the non-wide band-gap semiconductor layer, and a gate electrode is provided on the gate insulation layer.
Claims36
A semiconductor switching device, comprising:
- a first wide band-gap semiconductor layer having a first conductivity type;
- a first wide band-gap well region having a second conductivity type that is opposite the first conductivity type on the first wide band-gap semiconductor layer;
- a second wide band-gap well region having the second conductivity type on the first wide band-gap semiconductor layer;
- a non-wide band-gap semiconductor layer having the second conductivity type on the first wide band-gap semiconductor layer;
- a first wide band-gap source/drain region having the first conductivity type on the first wide band-gap well region;
- a second wide band-gap source/drain region having the first conductivity type on the second wide band-gap well region;
- a gate insulation layer on the non-wide band-gap semiconductor layer;
- and
- a gate electrode on the gate insulation layer.
A method of forming a semiconductor device, comprising:
- providing a first wide band-gap semiconductor layer having a first conductivity type on a substrate;
- providing a second wide band-gap semiconductor layer having a second conductivity type that is opposite the first conductivity type on the first wide band-gap semiconductor layer;
- providing a gate trench that penetrates the second wide band-gap semiconductor layer and a portion of the first wide band-gap semiconductor layer, wherein the gate trench divides the second wide band-gap semiconductor layer into a first wide band-gap well region and a second wide band-gap well region;
- providing a first wide band-gap source/drain region having the first conductivity type on the first wide band-gap well region;
- providing a second wide band-gap source/drain region having the first conductivity type on the second wide band-gap well region;
- and
- providing a non-wide band-gap semiconductor layer having the second conductivity type in the gate trench and on the first wide band-gap semiconductor layer.
A semiconductor device, comprising:
- a first wide band-gap semiconductor layer;
- a gate insulation layer on the first wide band-gap semiconductor layer;
- a gate electrode adjacent the gate insulation layer;
- and
- a non-wide band-gap semiconductor pattern that is between the first wide band-gap semiconductor layer and at least a portion of the gate insulation layer.
Dependencies are inferred from the claim text.