Loading patent…
AssigneesFaculty of Science and Technology New University of Lisbon, Electronics and Telecommunications Research Institute
InventorsSang Hee Park, Chi Sun Hwang, Chun Won Byun, Elvira M.C. Fortunato, Rodrigo F.P. Martins, Ana R.X. Barros, Nuno F.O. Correia, Pedro M.C. Barquinha, Vitor M.L. Figueiredo
Estimating the term…
Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.
A semiconductor device comprising a p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy.
A method of manufacturing a semiconductor device, comprising forming a p-type oxide layer on a substrate, the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy.
Dependencies are inferred from the claim text.