Electronic grade silk solution, otft and mim capacitor with silk protein as insulating material and methods for manufacturing the same
OwnerJenn-Chang HWANG, Chung Hwa Wang +1inventors
InventorsJenn-Chang HWANG, Chung Hwa Wang, Chao Ying Hsieh
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Abstract
An electronic grade silk solution, an organic thin film transistor (OTFT) and a metal-insulator-metal capacitor with silk protein as the insulating material manufactured by use of the silk solution, and methods for manufacturing the same are disclosed. The OTFT of the present invention comprises: a substrate; a gate disposed on the substrate; a gate insulating layer containing silk protein, which is disposed on the substrate and covers the gate; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the gate insulating layer.
Claims33
An organic thin film transistor, comprising:
- a substrate;
- a gate electrode disposed on the substrate;
- a gate insulating layer disposed on the substrate and covering the gate electrode, wherein the gate insulating layer comprises silk protein;
- an organic semiconductor layer;
- and
- a source electrode and a drain electrode,
- wherein the organic semiconductor layer, the source electrode, and the drain electrode are disposed over the gate insulating layer.
A method for manufacturing an organic thin film transistor, comprising the following steps:
- (A) providing a substrate;
- (B) forming a gate electrode on the substrate;
- (C) coating the substrate having the gate electrode formed thereon with a silk solution to obtain a gate insulating layer on the substrate and the gate electrode;
- and
- (D) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer.
A metal-insulator-metal capacitor, comprises:
- a substrate;
- a first electrode disposed on the substrate;
- an insulating layer disposed on the substrate and covering the first electrode, wherein the insulating layer comprises silk protein;
- and
- a second electrode disposed on the insulating layer.
A method for manufacturing a metal-insulator-metal capacitor, comprising the following steps:
- (A) providing a substrate;
- (B) forming a first electrode on the substrate;
- (C) coating the substrate having the first electrode formed thereon with a silk solution to obtain an insulating layer on the substrate and the first electrode;
- and
- (D) forming a second electrode on the insulating layer.
An electronic grade silk solution, comprising:
- silk protein, wherein the pH of the electronic grade silk solution is 3˜6.
Dependencies are inferred from the claim text.