Light-emitting device and method for manufacturing the same
AssigneeEpistar Corporation
InventorsChiu-Lin Yao, Ta-Cheng Hsu
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Abstract
A light-emitting device and the method for making the same is disclosed. The light-emitting device is a semiconductor device, comprising a growth substrate, an n-type semiconductor layer, a quantum well active layer and a p-type semiconductor layer. It combines the holographic and the quantum well interdiffusion (QWI) to form a photonic crystal light-emitting device having a dielectric constant of two-dimensional periodic variation or a material composition of two-dimensional periodic variation in the quantum well active layer. The photonic crystal light-emitting devices can enhance the internal efficiency and light extraction efficiency.
Claims20
A light-emitting device comprising:
- a substrate;
- and
- a quantum well active layer formed on the substrate in a first direction, comprising a first semiconductor material and a second semiconductor material alternatively arranged with each other in a second direction perpendicular to the first direction in a cross-section view, wherein the first semiconductor material is different from the second semiconductor material.
A light-emitting device, comprising:
- an upper semiconductor layer having a bottom surface;
- and
- an active layer of an epitaxial structure, having an upmost surface connected to the bottom surface, and a refraction index variation merely varied in the epitaxial structure and along the upmost surface.
An active layer of an epitaxial structure, comprising:
- an upmost surface;
- a lowermost surface;
- a right surface smaller than the upmost surface;
- and
- a refraction index variation varied in the epitaxial structure and along the upmost surface.
Dependencies are inferred from the claim text.