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US 2011/0253973 A1Published application
Semiconductor layer
AssigneeKoha Co., Ltd.
InventorsNoburo Ichinose, Kiyoshi Shimamura, Kazuo Aoki, Encarnacion Antonia Garcia Villora
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Abstract
A light-emitting element includes a β-Ga2O3 substrate, a GaN-based semiconductor layer formed on the β-Ga2O3 substrate, and a double-hetero light-emitting layer formed on the GaN-based semiconductor layer.
Claims6
A light-emitting element, comprising:
- a β-Ga2O3 substrate;
- a GaN-based semiconductor layer formed on the β-Ga2O3 substrate;
- and
- a double-hetero light-emitting layer formed on the GaN-based semiconductor layer.
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A light-emitting element, comprising:
- a β-Ga2O3 substrate;
- and
- a multiple quantum well layer formed on the β-Ga2O3 substrate.
A method of manufacturing a semiconductor substrate, said method comprising:
- forming a GaN-based semiconductor layer on a β-Ga2O3 substrate;
- forming a GaN epitaxial layer on the GaN-based semiconductor layer;
- and
- removing the β-Ga2O3 substrate and the GaN-based semiconductor layer from the GaN epitaxial layer, thereby manufacturing a substrate that comprises the GaN epitaxial layer.
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Dependencies are inferred from the claim text.