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US 2011/0253967 A1Published application
Switching device, drive and manufacturing methods for the same, integrated circuit device and memory device
AssigneeNEC Corporation
InventorsHisao KAWAURA, Hiroshi SUNAMURA
Life of this patent
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Abstract
Provided is a switching device including ion conducting part 4 having an ion conductor, first electrode 1 formed at a first gap away from ion conducting part 4, second electrode 2 formed to be in contact with ion conducting part 4 and third electrode 3 formed at a second gap away from ion conducting part 4. Second electrode 2 supplies metal ions to the ion conductor, or receives the metal ions from the ion conductor to precipitate metal corresponding to the metal ions.
Claims8
A switching device, comprising:
- an ion conducting part having an ion conductor inside of which metal ions can move, a first electrode formed on said ion conducting part to be in contact with said ion conducting part, a second electrode positioned on said ion conducting part at a predetermined distance away from said first electrode, for supplying said metal ions to said ion conductor, or for receiving said metal ions from the ion conductor to precipitate metal corresponding to the metal ions, and formed to be in contact with the ion conducting part, and a third electrode formed to have a gap with the ion conducting part, wherein:
- when a negative voltage relative to said second electrode is applied to said third electrode, a precipitate composed of said metal grows at a region of said ion conducting part between said first electrode and said second electrode, and in response to growth of the precipitate, electric characteristics change.
Dependencies are inferred from the claim text.