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AssigneeHitachi High-Technologies Corporation
InventorsMasami Kamibayashi, Masahito Mori, Hiroyuki Kobayashi, Keizo Suzuki, Naoyuki Kofuji
Estimating the term…
The present invention is intended to improve the uniformity in a distribution function of incident ion energy inside a wafer surface, and realize uniform plasma processing (etching or the like) inside the wafer surface. In a plasma processing apparatus, a bias application portion of a placement electrode on which a wafer is placed is divided into an inner electrode and an outer electrode at positions near the center of the wafer and the edge thereof. Each of a first bias power and a second bias power to be used to accelerate ions incident on the wafer is bifurcated, and the resultant bias powers are fed to the inner electrode and outer electrode using a power distributor by adjusting the power ratio.
A plasma processing apparatus comprising a processing chamber, a processing gas feeding system that feeds processing gases to the processing chamber, a high-frequency power supply for use in producing plasma from the processing gases, a placement electrode which is disposed in the processing chamber and on which an entity to be processed is placed, and a first bias power supply and a second bias power supply that are used to accelerate ions which are present in the plasma and incident on the entity to be processed and that handle mutually different frequencies,
A plasma processing apparatus comprising a processing chamber, a processing gas feeding system that feeds processing gases to the processing chamber, a high-frequency power supply for use in producing plasma from the processing gases, a placement electrode which is disposed in the processing chamber and on which an entity to be processed is placed, and a first bias power supply and a second bias power supply that are used to accelerate ions which are present in the plasma and incident on the entity to be processed and that handle mutually different frequencies, the plasma processing apparatus further comprising:
A plasma processing apparatus comprising a processing chamber, a processing gas feeding system that feeds a processing gas to the processing chamber, a high-frequency power supply for use in producing plasma from the processing gas, a placement electrode which is disposed in the processing chamber and on which an entity to be processed is placed, and a first bias power supply and a second bias power supply that are used to accelerate ions which are present in the plasma and incident on the entity to be processed and that handle mutually different frequencies,
Dependencies are inferred from the claim text.